this is information on a product in full production. march 2012 doc id 10029 rev 3 1/7 7 STPS61H100C high voltage power schottky rectifier datasheet ? production data features high junction temperature capability low leakage current good trade off between leakage current and forward voltage drop low thermal resistance high frequency operation description dual center tap schottky rectifier suited for high frequency switch mode power supply. packaged in to-247, this device is intended for use to enhance the relia bility of the application. j table 1. device summary i f(av) 2 x 30 a v rrm 100 v t j (max) 175 c v f (max) 0.67 v a1 k1 a2 a1 a2 k to-247 www.st.com
characteristics STPS61H100C 2/7 doc id 10029 rev 3 1 characteristics when the diodes 1 and 2 are used simultaneously: tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c) to evaluate the conduction losses use the following equation: p = 0.56 x i f(av) + 0.0036 i f 2 (rms) table 2. absolute ratings (limiting values, per diode) symbol parameter value unit v rrm repetitive peak reverse voltage 100 v i f(rms) forward rms current 80 a i f(av) average forward current t c = 150 c = 0.5 per diode per device 30 60 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 450 a p arm repetitive peak avalanche power t p = 1 s t j = 25 c 26400 w t stg storage temperature range -65 to + 175 c t j maximum operating junction temperature (1) 1. condition to avoid thermal r unaway for a diode on its own heatsink 175 c dv/dt critical rate of rise of reverse voltage 10000 v/s table 3. thermal resistance symbol parameter value unit r th(j-c) junction to case per diode to t a l 0.9 0.6 c/w r th(c) junction to case coupling 0.3 c/w table 4. static electrical characteristics (per diode) symbol parameter test conditions min. typ. max. unit i r (1) 1. pulse test: tp = 380 s, < 2% reverse leakage current t j = 25 c v r = v rrm 316a t j = 125 c 4 16 ma v f (1) forward voltage drop t j = 25 c i f = 30 a 0.79 v t j = 125 c i f = 30 a 0.63 0.67 t j = 25 c i f = 60 a 0.93 t j = 125 c i f = 60 a 0.72 0.78 dptot dtj < 1 rth(j-a)
STPS61H100C characteristics doc id 10029 rev 3 3/7 figure 1. conduction losses versus average current (per diode) figure 2. normalized avalanche power derating versus pulse duration p (w) f(av) 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 i (a) f(av) t =tp/t tp = 0.05 = 0.1 = 0.2 = 0.5 = 1 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (s) p p(t p ) p (1 s) arm arm figure 3. normalized avalanche power derating versus junction temperature figure 4. average forward current versus ambient temperature ( = 0.5, per diode) 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 t (c) j p(t j ) p (25 c) arm arm 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 175 i (a) f(av) t (c) amb t =tp/t tp r=r th(j-a) th(j-c) r =15c/w th(j-a) figure 5. non repetitive surge peak forward current versus overload duration (maximum values, per diode) figure 6. relative variation of thermal impedance junction to case versus pulse duration 0 50 100 150 200 250 300 350 400 1.e-03 1.e-02 1.e-01 1.e+00 i (a) m i m t =0.5 t(s) t =25c c t =75c c t =125c c 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 z/r th(j-c) th(j-c) = 0.5 = 0.2 = 0.1 single pulse t =tp/t tp t (s) p
characteristics STPS61H100C 4/7 doc id 10029 rev 3 figure 9. forward voltage drop versus forward current (per diode) figure 7. reverse leakage current versus reverse voltage applied (typical values, per diode) figure 8. junction capacitance versus reverse voltage applied (typical values, per diode) i (ma) r 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 10 20 30 40 50 60 70 80 90 100 v (v) r t =125c j t =150c j t =100c j t =50c j t =25c j t =75c j 0.10 1.00 10.00 1 10 100 c(nf) v (v) r f=1mhz v =30mv t =25c osc rms j 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 i (a) fm v (v) fm t =25c (maximum values) j t =125c (maximum values) j t =125c (typical values) j
STPS61H100C package information doc id 10029 rev 3 5/7 2 package information epoxy meets ul94, v0 lead-free package cooling method: conduction recommended torque value: 0.9 to 1.2 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 5. to-247 dimensions ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.85 5.15 0.191 0.203 a1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 d (1) 1. dimension d plus gate protrusion does not exceed 20.5 mm 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e 5.30 5.45 5.60 0.209 0.215 0.220 l 14.20 14.80 0.559 0.582 l1 3.70 4.30 0.145 0.169 l2 18.50 typ. 0.728 typ. ? p (2) 2. resin thickness around the mounti ng hole is not less than 0.9 mm 3.55 3.65 0.139 0.143 ? r 4.50 5.50 0.177 0.217 s 5.30 5.50 5.70 0.209 0.216 0.224 e l2 s d c a1 back view heat-sink plane l1 l b1 b2 b a e 1 1 2 2 3 3 ? r ? p
ordering information STPS61H100C 6/7 doc id 10029 rev 3 3 ordering information 4 revision history table 6. ordering information order code marking package weight base qty delivery mode STPS61H100Cw STPS61H100Cw to-247 4.4 g 30 tube table 7. document revision history date revision changes oct-2003 1a previous version sep-2006 2 reformatted for internal distribution. 12-mar-2012 3 updated package dimension nomenclature and illustration in ta bl e 5 . dimensions of actual package remain unchanged.
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